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dc.contributor.author崔一陽en_US
dc.contributor.authorTsuei, Youngen_US
dc.contributor.author楊賜麟en_US
dc.contributor.authorSu-Lin Yangen_US
dc.date.accessioned2014-12-12T02:15:27Z-
dc.date.available2014-12-12T02:15:27Z-
dc.date.issued1995en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT840429014en_US
dc.identifier.urihttp://hdl.handle.net/11536/60575-
dc.description.abstract本文主要研究半導體量子侷限結構中電子的行徑, 藉由有限差分束傳輸法以及分數維度模型,我們分別 計算量子線以及擴散型量子井中電子與電洞的侷限能態 及激子束縛能.此外,我們亦模擬計算量子井,量子位障, 共振穿隧結構及超晶格在斜向外加磁場下,電子能態隨 迴轉中心位置及外加磁場角度的變化情形. In this thesis, we study the electron behaviors in semiconductor quantum confined structure, By making use finite difference beam propagation method and fractional dimension model, we calculate the electron and hole confinement energies and exciton binding energies of quantum wires and interdiffusion quantum wells, respectively. Besides, we calculate the variation of electron energy states with cyclotron orbit centers under tilted magnetic fields.zh_TW
dc.language.isozh_TWen_US
dc.subject半導體zh_TW
dc.subject電子能態zh_TW
dc.subject激子zh_TW
dc.subject束縛能zh_TW
dc.subject量子井zh_TW
dc.subject量子線zh_TW
dc.subjectsemiconductoren_US
dc.subjectconfinement energyen_US
dc.subjectexcitonen_US
dc.subjectbinding energyen_US
dc.subjectquantum wellen_US
dc.subjectquantum wireen_US
dc.title半導體量子微結構電子能態之研究zh_TW
dc.titleThe Study of Electronic States in Semiconductor Quantum Microstructuresen_US
dc.typeThesisen_US
dc.contributor.department電子物理系所zh_TW
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