鈦酸鋯基介電薄膜的製程與基本特性之研究

Abstract

本論文主要研究探討鈦酸鋯基介電薄膜的製程與薄膜基本特性其中包括以 溶膠-凝膠法備製鐵電性 PLZT(8/65/35)薄膜與利用高頻磁控式濺鍍法備 製ZrTiO4介電薄膜。在以溶膠-凝膠法備製 PLZT薄膜實驗中，以醋酸鉛、 硝酸鑭及鋯鈦的有機金屬化合物為起始物，以2-甲氧基乙醇為溶劑，配製 成澄清的前驅物溶液，並利用旋轉鍍膜的方法在 Pt 基板上備製PLZT薄膜 。對於此薄膜製程的參數如；乾燥控製添加劑(DCCA)的選擇、燒結溫度與 時間及升溫速率均有詳細的探討。在利用高頻磁控式濺鍍法實驗中，我們 採用自行設計組裝的薄膜濺鍍系統與自行配製的ZrTiO4材料作為靶材。首 度在低於 450 oC低溫下沈積高品質的ZrTiO4介電薄膜。經由各種不同的 薄膜分析技術，分析其物理特性，光學特性、電學特性與機械性質等特性 。 This dissertation presents the depostion processes and physical properties of ZrTiO4-based dielectric thin films in this research, including the fabrication of PLZT ferroelectric thin film by sol-gel spin coating and the preparation of ZrTiO4 dieletric thin film by RF magnetron sputtering method. In sol- gel spin coating process, the precursor solution were formed by mixing lead acetate hydrate,lanthanum nitrate hydrate, zirconium n-propoxid and tetrabutylorthotitanate and 2-methoxyethanol as solvent was used. The effects of the drying control chemical additives, annealing temperature and duration on the qualities of the PLZT film were studied. Depostion of ZrTiO4 thin film was carried out in a magnetron sputtering system and the target (ZrTiO4 powder) preparated via solid- state reaction. To our knowledge, it was the first time that depostion of high quality dieletric ZrTiO4 thin films was realized. The properties of ZrTiO4 thin film (such as physical, electrical, optical and mechanical properties) were studied utilizing various thin film analysis techniques.