标题: 电子回旋共振低温氧化及低热能退火之研究
Low Temperature Electron Cyclotron Resonance Oxidation with Low Thermal Budget Annealing
作者: 张忠义
Chung-Yih Chang
张俊彦
Chun-Yen Chang
电子研究所
关键字: 电子回旋共振,超薄氧化层(40~O),二氧化氮,低温;ECR,ultra-thin oxide(40~O),N2O,low temperature
公开日期: 1994
摘要: 我们成功地使用快速加热氧气, 氮气, 及二氧化氮技术去改进用低温(-20
□C) 电子回旋共振技术所成长的薄氧化层.其中以用二氧化氮去快速加热
处理, 由于矽氮键结取代在基板矽/氧化层的弱键,使得氧化层得到较好的
电性改进. 崩溃电场(超过 12.5 MV/cm), 介面陷阱电荷密度(1.95e10
cm-2 eV-1) 和漏电等特性和炉管成长的氧化层比较大致相等. 傅利叶转
换红外线光谱分析, 蚀刻率分析等使我们更加确定这快速退火处理的确大
幅提高氧化层品质. 氧化层厚度对成长时间可以准确地由 Deal-Grove 公
式所模拟. 另外, 藉由快速加热法所成长的超薄氧化层(40~O), 这电荷注
入引发的氧化层漏电, 准崩溃特性, 及最大注入电荷对闸极电压极性相
关, 亦在本文研究的范围之内.
In this thesis,we successfully utilize the rapid thermal O2,
N2, and N2O annealing technology to improve the quality of the
ultra-low temperature (-20□C) electron cyclotron resonance
(ECR) thin oxide. Among the three kinds of annealing
technology, the N2O annealed oxide is found to have the better
electrical characteristics due to the Si-N bonds in place of
the weaker bonds at the Si/SiO2 interface. The breakdwon field(
over 12.5 MV/cm), Dit (1.95e10cm-2eV-1) and leakage current are
comparable to the furnace oxide. The material analyses,
including the Fourier transform infrared spectrum analysis
(FTIR), etch rate test, assure that the low thermal budget
annealing indeed greatly improves the oxide quality. The
relationship between the oxide thickness and growth time is
well described by the Deal-Grove model. By way of the rapid
thermal 40~O oxide, the characteristics of the ultra-thin
oxide, such as the stress induced leakage current (SILC), quasi-
breakdown phenomenon, the polarity dependence of the Qbd have
been studied.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT830430054
http://hdl.handle.net/11536/59242
显示于类别:Thesis