以含鹵素元素氣體之子迴旋共振電漿進行複晶矽的蝕刻技術

Abstract

本論文以含有鹵素元素的電子迴旋共振電漿進行複晶矽蝕刻的研究.研究 內容包括蝕刻速率,非方向性特性,選擇性,材料表面狀況,及蝕刻後對金氧 半電容損壞的影響.我們發現氧氣的流率對蝕刻有明顯的影響;微波功率會 影響電漿濃度 ,但過高的微波功率會使氧化現象發生;射頻功率增加會增 加蝕刻速率;在電性上,過度的蝕刻會影響電容的電性,而不同天線結構的 電容有不同的損壞. In this thesis, we investigate the polysilicon etching characteristics with halogen bearing ECR plasmas. The investigations include etch rate, anisotropy, selectivity, surface morphology, and the oxide damage in the MOS capacitor after etching. We find that the etch rate is strongly depenedent on the oxygen flow rate. Microwave power can increase plasma density, but too much microwave power will promote oxidation. Besides, RF power increases etch rate. In electrical properties, over etch ratio can affect the capacitor performance, and capacitors with different antenna structure can have different damage.