利用超高真空化學氣相沉積成長P型通道矽鍺調變攙雜及δ攙雜場效電晶體

Abstract

本論文中，我們已成功的利用超高真空化學氣相沉積成長出矽與矽鍺異質 接面，利用Shubnikov de Hass (SdH) 分析量測，可證實矽與矽鍺異質接 面有二維電洞雲存在，並可得到其電洞遷移率在0.35 K時為11,000 cm2 V-1s-1，且其電洞濃度為3.8e11 cm-2 。我們並研製5微米閘極之p型通道 矽與矽鍺調變攙雜場效電晶體(MODFET)，其互導可達9.25 mS/mm。另外， 我們研製5微米閘極δ攙雜矽鍺金半場效電晶體(MESFET)，其互導可 達2.33 mS/mm。 In this thesis , we have sucessfully grown Si/SiGe heterojunction . The existence of the 2DHG in the Si/SiGe heterojunction is confirmed by the Shubnikov de Hass measurement . The mobility is found to be 11,000 cm2V-1s-1 and sheet carrier density is 3.8e11 cm-2 at 0.35 K . We have also fabricated p-channel Si/SiGe MODFET and boron delta-doped SiGe MESFET , the extinsic transconductance can reach 9.25 mS/mm and 2.33 mS/mm , respectively .