原子層結構p型金氧半電晶體在0.1微米以下最佳化模擬的研究

Abstract

在這篇論文□,利用模擬提出設計具有原子層摻雜(ALD)或源極-汲極分配 佈植(SDDI)結構的0.1um正型金氧半場效電晶體的考量. 我們證明具有ALD 結構正型金氧半場效電晶體在極短通道區域較傳統元件表現出優越的特 性,像在電流驅動力方面及對短通道效應的控制和寄生接面電容方面 . 這 □SDDI結構首次提出來應用在小於0.1微米金氧半場效電晶體上. SD DI元 件的特性表現出優於自我對準袋狀佈植(SPI)元件, 包括較高電流驅動力 及較小寄生接面電容. 另一方面, 發展具有ALD結構正型金氧半場效電晶 體的低溫製程及技術. 結果證明低溫製程是一個具有成功希望的技術 . The device design considerations of 0.1 um pMOSFETs with " Substrate Engineering", including ALD (atomic-layer doped) and SDDI (source-drain divider implant or strategic-drain defense initiative) structures are proposed by simulation in this thesis . We show that pMOSFETs with ALD structure exhibit superior performance, not only current drivability but also control of short channel effects and parasitic junction capacitance, compared with those with conventional structure in deep- submicrometer regime. Here, SDDI structure is firstly proposed to apply to sub-0.1 um MOSFET devices. We show that the characteristics of SDDI devices are superior to those of SPI (self-aligned pocket implant) devices, including higher current drivability and lower junction capacitance. On the other hand, the low temperature process for pMOSFETs with ALD structure has been developed and fabricated in this work. Results show that it is a promising technology in the fabrication of the deep- submicrometer pMOSFETs.