濺鍍功率與氧分壓對射頻磁控濺鍍氧化銦錫薄膜性質的影響與在玻璃基板上抗反射鍍膜的設計

Abstract

利用射頻磁控濺鍍法，將氧化銦錫薄膜沉積於未加熱之基板上，研究濺鍍 功率與氧分壓對薄膜性質的影響。實驗發現氧化銦錫薄膜的折射率隨著濺 鍍功率減少與氧分壓增加而減少。製備完成的薄膜折射率約有 1.87的變 化。經由實驗製程來控制薄膜的折射率，探討多層氧化銦錫薄膜濺鍍在玻 璃基板上之抗反射覆膜的可行性。 Indium tin oxide (ITO) were deposited onto unheated glass and polycarbonate substrates by r.f. magnetron sputtering. The properties of ITO films prepared at various r.f. powers and oxygen percentages are investigated. It is found the refractive index of ITO film decreases with decreasing r.f. power and with increasing oxygen percentage. The refractive index of the as-deposited film ranges from 1.87 to 2.17. The feasibility of the multilayer antireflective (AR) coating design with ITO films of various refractive indices is explore in this study.