場發射元件之研製與特性分析

Abstract

在本論文中,我們利用非等向性之電漿蝕刻和氧化削尖技術來製造擁 高外 觀比之矽微小尖端.為了改善場發射電流之效率及穩定性,我們將矽 小尖 端之表面覆蓋上不同物質,包括金屬,碳化矽和鑽石膜.對於不同的郅\物, 我們做了詳細的電性和材料特性分析藉以探討其對於場發射電流尬v響.在 陽極1100伏特偏壓及保持陰極到陽極的距離為30微米之狀況下,郅\鉻金屬 的微小尖端擁有相對於矽微小尖端二十倍的場發射電流量.再□覆蓋鑽石 膜的微小尖端比起矽及覆蓋鉻金屬之微小尖端具有更優異的黤o射電流量. 如此大的電流特性改善,可提供於場發射元件之製造與應用除了微小尖端 的製造外,用一種新的自我對準技術我們已經成功地製造X具有深次微米之 閘極開口之場發射三極體.利用這種技術,我們製造了許h不同構造的火山 口型閘極元件. In this thesis, high aspect-ratio microtips with sharp curvature have been formed employing the semi-anisotropic plasma etching and the oxidation sharpening.To improve the emission efficiency and stability,the surface of silicon microtips coated with various materials including metal, SiC and diamond films were investigated.Both the electrical and material properties were characterized and analyzed in details to survey the efficiency of different surface coatings. At the anode bias of 1100V and constant anode-to-cathode spacing of 30 um, the emission currents of Cr-clad microtips are twenty times higher than those of un-coated ones.Furthermore, the emission currents of diamond-clad microtips are superior to both Cr-clad and pure Si ones.Such significant improvement of the I-V property could provide to the fabrication and application of the field emission triodes. In addition to the fabrication of the microtips, the gated field emitter arrays with deep- submicron gate aperture have been successfully fabricated using a new-aligned process.Various device structures with volcano- shaped gate were fabricated by method.