Investigation of Switching-Time Variations for Nanoscale MOSFETs Using the Effective-Drive-Current Approach

標題:	Investigation of Switching-Time Variations for Nanoscale MOSFETs Using the Effective-Drive-Current Approach
作者:	Wu, Yu-Sheng Fan, Ming-Long Su, Pin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	Line edge roughness (LER);MOSFET;random dopant fluctuation (RDF);switching time (ST)
公開日期:	1-二月-2010
摘要:	This letter investigates the impacts of random dopant fluctuation (RDF) and line edge roughness (LER) on the switching-time (ST) variation for nanoscale MOSFETs using the effective-drive-current (I(eff)) approach that decouples the ST variation into transition-charge (Delta Q) and I(eff) variations. Although the RDF has been recognized as the main variation source to the threshold-voltage variation, this letter indicates that the relative importance of LER increases as the ST variation is considered.
URI:	http://dx.doi.org/10.1109/LED.2009.2037247 http://hdl.handle.net/11536/5940
ISSN:	0741-3106
DOI:	10.1109/LED.2009.2037247
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	31
Issue:	2
起始頁:	162
結束頁:	164
顯示於類別：	期刊論文

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。