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dc.contributor.authorChang, Tzu-Yuehen_US
dc.contributor.authorCheng, You-Weien_US
dc.contributor.authorLee, Po-Tsungen_US
dc.date.accessioned2014-12-08T15:07:33Z-
dc.date.available2014-12-08T15:07:33Z-
dc.date.issued2010-01-25en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3299265en_US
dc.identifier.urihttp://hdl.handle.net/11536/5952-
dc.description.abstractThe electrical properties of a device with an Al/Alq(3)/nanostructured MoO(3)/Alq(3)/p(+)-Si structure were investigated for organic resistance switching memories. The conductance of the device can be electrically switched to either high conductance or low conductance. The bistable switching of the device is attributed to the MoO(3) nanoclusterlike layer interposed between the Alq(3) thin films. When the device was switched to high conductance, a space-charge field dominated carrier transportation of the device. The space-charge field was resulted from charges trapped in the MoO(3) nanoclusterlike layer. Both retention measurement and write-read-erase-read cycles of the device are also provided.en_US
dc.language.isoen_USen_US
dc.titleElectrical characteristics of an organic bistable device using an Al/Alq(3)/nanostructured MoO(3)/Alq(3)/p(+)-Si structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3299265en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume96en_US
dc.citation.issue4en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
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