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dc.contributor.authorLee, K. H.en_US
dc.contributor.authorLin, H. C.en_US
dc.contributor.authorHsu, H. H.en_US
dc.contributor.authorHuang, T. Y.en_US
dc.date.accessioned2014-12-08T15:07:34Z-
dc.date.available2014-12-08T15:07:34Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-0636-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/5957-
dc.description.abstractNH(3) plasma treatment has been employed to improve the performance of a novel double-gated poly-Si nanowire thin-film transistor in terms of increased on-state current, reduced off-state current, and steeper sub-threshold slope. An interesting finding is that the radiation damage, accompanying by a negative shift in threshold voltage, appears to occur in the early stage of plasma treatment for devices with top poly-gate. Such effect disappears when an Al top-gate is used instead.en_US
dc.language.isoen_USen_US
dc.titleImpacts of NH(3) plasma treatment on double-gated poly-Si nanowire thin-film transistorsen_US
dc.typeArticleen_US
dc.identifier.journalEDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGSen_US
dc.citation.spage125en_US
dc.citation.epage128en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000254170700033-
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