標題: A High-Performance 30-nm Gate-All-Around Poly-Si Nanowire Thin-Film Transistor With NH(3) Plasma Treatment
作者: Lee, Chen-Ming
Tsui, Bing-Yue
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-七月-2010
摘要: A novel 30-nm gate-all-around (GAA) polycrystalline-silicon (poly-Si) nanowire (NW) thin-film transistor (TFT) is reported for the first time. Owing to the NW and GAA structure, the channel electric potential is well controlled by the gate electrode. After NH(3) plasma treatment for defects passivation, the values of 0.97 V, 224 mV/dec., and 0.895 V/V of threshold voltage, subthreshold swing, and drain-induced barrier lowering are achieved, respectively. A high driving current of 459 mu A/mu m and an ON-state/OFF-state current ratio of 5 x 10(7) are also obtained. These excellent characteristics indicate that the ultrasmall GAA NW poly-Si TFT would have the potential to be applied in the 3-D integrated-circuit or system-on-panel field.
URI: http://dx.doi.org/10.1109/LED.2010.2049564
http://hdl.handle.net/11536/5200
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2049564
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 7
起始頁: 683
結束頁: 685
顯示於類別:期刊論文