Impacts of NH(3) plasma treatment on double-gated poly-Si nanowire thin-film transistors

Abstract

NH(3) plasma treatment has been employed to improve the performance of a novel double-gated poly-Si nanowire thin-film transistor in terms of increased on-state current, reduced off-state current, and steeper sub-threshold slope. An interesting finding is that the radiation damage, accompanying by a negative shift in threshold voltage, appears to occur in the early stage of plasma treatment for devices with top poly-gate. Such effect disappears when an Al top-gate is used instead.