標題: Impacts of NH(3) plasma treatment on double-gated poly-Si nanowire thin-film transistors
作者: Lee, K. H.
Lin, H. C.
Hsu, H. H.
Huang, T. Y.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2007
摘要: NH(3) plasma treatment has been employed to improve the performance of a novel double-gated poly-Si nanowire thin-film transistor in terms of increased on-state current, reduced off-state current, and steeper sub-threshold slope. An interesting finding is that the radiation damage, accompanying by a negative shift in threshold voltage, appears to occur in the early stage of plasma treatment for devices with top poly-gate. Such effect disappears when an Al top-gate is used instead.
URI: http://hdl.handle.net/11536/5957
ISBN: 978-1-4244-0636-4
期刊: EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS
起始頁: 125
結束頁: 128
Appears in Collections:Conferences Paper