亞胺基鈮錯化合物之合成及以化學氣相沉積法成長碳氮化鈮薄膜

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DC Field	Value	Language
dc.contributor.author	林志成	en_US
dc.contributor.author	Jyh-Cherng Lin	en_US
dc.contributor.author	裘性天	en_US
dc.contributor.author	Hsin-Tein Chiu	en_US
dc.date.accessioned	2014-12-12T02:14:07Z	-
dc.date.available	2014-12-12T02:14:07Z	-
dc.date.issued	1994	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#NT830500013	en_US
dc.identifier.uri	http://hdl.handle.net/11536/59588	-
dc.description.abstract	本實驗是以五氯化鈮為起始物,分別與 Alkyl-trimethylsilylamine 應, 合成 Alkylimido-trischloro-bispyridine niobium complexes, 再續與 Lithium diethylamide 反應,合成 Alkylimido- tetrakis( diethylamido)niobium complexes。以正丙基亞胺基鈮錯化合物為單源前驅物,以矽晶片為基材,沉積溫度在四百五十至六百五十度,經化學氣相沉積法成長碳氮化鈮薄膜, The syntheses and characterization of organimidoniobium complexes are reported. N-propylimido-tetrakis(diethylamido) niobium was used as a singal source precursor to deposite thinms of NbCxNy by chemical vapor deposition. Deposition ofpolycrystalline thin films was carried out at- 650 C in cold wall reator.	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	亞胺基;鈮;化學氣相沉積法	zh_TW
dc.subject	Imido;Niobium;LPCVD	en_US
dc.title	亞胺基鈮錯化合物之合成及以化學氣相沉積法成長碳氮化鈮薄膜	zh_TW
dc.title	Syntheses of Imidoniobium Complexes and Chemical Vapor ion of Niobium Carbonitride Thin Films	en_US
dc.type	Thesis	en_US
dc.contributor.department	應用化學系碩博士班	zh_TW
Appears in Collections:	Thesis