以低壓化學氣相沉積法成長錫矽碳薄膜

Abstract

本實驗是以四(三甲基矽烷基)錫為單源前驅物,以矽晶片為基材,沉積溫度 在七百至一千二百度,經低壓化學氣相沉積法及電漿化學氣相沉積法成長 錫矽碳薄膜.若使用電漿輔助可以改善薄膜結晶性.經計算其活化能為二十 六左右.從XRD譜圖顯示在一千度以上所得到的晶形為beta-碳化矽的面心 結構;在九百到一千度之間所成長的薄膜晶形為beta碳化矽與錫四面體之 混合晶形;在九百度以下為錫四面體結構.從紅外光光譜顯示吸收位置接近 波數八百左右.從歐傑光譜知薄膜內部組成均勻.從電子光譜化學分析知道 在高溫時,薄膜中主要是以碳矽鍵結形式存在;而較低溫時,是錫矽碳混合 形式存在.此外,利用高溫熱處理的方法可將低溫所成長薄膜中之錫昇華成 功製備了多孔碳化矽薄膜. Tetrakis(trimethylsilyl)stanny was used as a single source precursor to deposite thin films of SiSnxCy by low pressure chemical vapor deposition. Deposition of uniform thin films with good adhesion on Si(111) substrates were carried out at temperature 973K - 1473K in a remote plasma enhanced hot wall reactor. XRD studies indicated that the films were beta silicon carbide above 1273K. Between 1173K - 1273K, both beta silicon carbide and tetragonal phase of tin were observed in the films. Below 1173K, the major crystalline components of the films were tetragonal phase of tin. Infrared spectra of the films showed a major absorption near 800cm-1. ESCA studies showed binding energies of the Sn3d5/2, Sn3d3/2, Si2p and C1s electron at 485.1 eV, 493.7eV, 100.3eV and 283.2eV. Furthermore, we have prepared thin films of the porous silicon carbide successfully by annealing the films at 1473K with high concentration of tin grown at 973K and 1073K.