電漿輔助化學沈積法的氮化矽膜之表面型態對陽極氧化鋁/氮化矽雙層介電層非晶矽薄膜電晶體電性之影響

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	李秋德	en_US
dc.contributor.author	Li, Qiu De	en_US
dc.contributor.author	馮明憲	en_US
dc.contributor.author	Feng, Ming Xian	en_US
dc.date.accessioned	2014-12-12T02:14:12Z	-
dc.date.available	2014-12-12T02:14:12Z	-
dc.date.issued	1994	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#NT832159013	en_US
dc.identifier.uri	http://hdl.handle.net/11536/59677	-
dc.language.iso	en_US	en_US
dc.title	電漿輔助化學沈積法的氮化矽膜之表面型態對陽極氧化鋁/氮化矽雙層介電層非晶矽薄膜電晶體電性之影響	zh_TW
dc.title	Effects of SiNx morphology on the electrical properties of a-Si:H TFT with Al2O3/XiNx double layered gate insulators	en_US
dc.type	Thesis	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
顯示於類別：	畢業論文