標題: Enhancing Sn-Ag Solder Joints Electromigration Lifetime via the Under-Bump-Metallization Structure Design
作者: Chen, Hsiao-Yun
Chen, Chih
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2008
摘要: The authors demonstrate a Ni/Cu bilayer structure for the under-bump-metallization (UBM) in Sn-Ag flip chip solder joints to enhance the electronmogration lifetime. The Ni layer provides two main contributions for the lifetime improvement. First, since Ni is a good diffusion barrier for Cu, it reduces the electromigration failure by UBM dissolution. Furthermore, the Ni layer limits the current crowding effect by the current redistribution which has a good agreement with our three-dimensional simulation result. By applying Infrared Microscope (IR), the thermal distribution inside solder joints can be obtained as well. The hot spot temperature near the entrance point was 129 degrees C inside Cu UBM system, while it was only 122 degrees C in CuNi UBM system. In summery, the addition of higher resistivity Ni layer successfully redistributed the temperature and current route.
URI: http://hdl.handle.net/11536/597
ISBN: 978-1-4244-2117-6
期刊: EPTC: 2008 10TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE, VOLS 1-3
起始頁: 1144
結束頁: 1147
Appears in Collections:Conferences Paper