標題: | Effects of electronic confinement and substrate on the low-temperature growth of Pb islands on Si(100)-2 x 1 surfaces |
作者: | Hsu, C. C. Lin, W. H. Ou, Y. S. Su, W. B. Chang, C. S. Wu, C. I. Tsong, Tien T. 電子物理學系 Department of Electrophysics |
關鍵字: | Pb(100) thin film;Pb(111) thin film;Si(111) surface;Electronic confinement;Low-temperature growth;STM |
公開日期: | 1-一月-2010 |
摘要: | The growth of Pb films on the Si(1 0 0)-2 x 1 surface has been investigated at low temperature using scanning tunneling microscopy Although the orientation of the substrate is (1 0 0), flat-top Pb islands with (1 1 1) surface can be observed The island thickness is confined within four to nine atomic layers at low coverage Among these islands. those with a thickness of six layers are most abundant Quantum-well states in Pb(1 1 1) islands of different thickness are acquired by scanning tunneling spectioscopy. They are found to be identical to those taken oil the Pb(1 1 1) islands grown oil the Si(1 1 1)7 x 7 surface. Besides Pb(1 1 1) islands. two additional types of Pb islands are formed. rectangular flat-top Pb(1 0 0) islands and rectangular three-dimensional (3D) Pb islands, and both their orientations rotate by 90 degrees from a terrace to the adjacent one This phenomenon implies that the structures of Pb(1 0 0) and 3D islands are influenced by the Si(1 0 0)-2 x 1 substrate (C) 2009 Elsevier B.V. All rights reserved |
URI: | http://dx.doi.org/10.1016/j.susc.2009.09.025 http://hdl.handle.net/11536/6003 |
ISSN: | 0039-6028 |
DOI: | 10.1016/j.susc.2009.09.025 |
期刊: | SURFACE SCIENCE |
Volume: | 604 |
Issue: | 1 |
起始頁: | 1 |
結束頁: | 5 |
顯示於類別: | 期刊論文 |