標題: | Study of the inversion behaviors of Al(2)O(3)/In(x)Ga(1-x)As metal-oxide-semiconductor capacitors with different In contents |
作者: | Wu, Yun-Chi Chang, Edward Yi Lin, Yueh-Chin Kei, Chi-Chung Hudait, Mantu K. Radosavljevic, Marko Wong, Yuen-Yee Chang, Chia-Ta Huang, Jui-Chien Tang, Shih-Hsuan 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-一月-2010 |
摘要: | In(x)Ga(1-x)As III-V compound semiconductor metal-oxide-semiconductor field-effect transistors have become a popular topic recently due to the higher drift velocity, and lower effective mass of the In(x)Ga(1-x)As materials. The impact of In content on the accumulation and inversion behaviors of the Al(2)O(3)/In(x)Ga(1-x)As capacitors is investigated in this study. For the various In(x)Ga(1-x)As materials studied, the Al(2)O(3)/InAs MOS system showed the strongest inversion phenomena due to the shorter response time of minority carrier of InAs compared to other In(x)Ga(1-x)As materials. Also, very low gate leakage current in the 10(-8) A/cm(2) range was observed for these capacitors. These results demonstrate that Al(2)O(3)/InAs MOS system with strong inversion phenomena and low leakage gate current is potential candidate for future high-performance low power logic MOSFET applications. (C) 2009 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.sse.2009.09.033 http://hdl.handle.net/11536/6014 |
ISSN: | 0038-1101 |
DOI: | 10.1016/j.sse.2009.09.033 |
期刊: | SOLID-STATE ELECTRONICS |
Volume: | 54 |
Issue: | 1 |
起始頁: | 37 |
結束頁: | 41 |
顯示於類別: | 期刊論文 |