電光式高頻駐波量測技術及其應用之研究

Abstract

我們首次使用以半導體雷射為光源的光電鎖相及電光取樣技術,成功地量 測了砷化鎵微帶線上的高頻駐波到16GHz.這個技術使得我們可以很方便且 精確地,得知微波傳輸線的特性,諸如:電壓駐波比,反射係數和色散特性等 重要參數.利用我們的技術在相位量測上的優越靈敏度,我們分析了4GHz 到16GHz的駐波相位,並且得知了砷化鎵微帶線的色散特性及反射係數.這 些結果和理論值相當地吻合.我們也擴展這個技術,對一段傳輸線作了S參 數量測. We demonstrated for the first time a laser-diode-based optoelectronic phase-referencing scheme for tracking and measurement of the amplitude and phase of electro-optically down-converted RF standing wave patterns in a GaAs microstrip transmission line up to 16GHz. This technique allows convenient and accurate on-chip determination of key parameters of the microwave transmission line such as reflection coefficients and dispersion characteristis. Taking advantage ofthe excellent sensitivity for phase measurement of our technique, we analyzed the phase data of the standing waves of GaAs microstrip transmission line in the range of 4 to 16GHz and obtained the dispersion characteristics and reflection coefficients. These results obtained are in good agreement with theoretical predictions. We also extend this technique to measure S- parameter of a transmission.