以外部電光取樣法探測砷離子佈植砷化鎵光導元件

Abstract

我們的實驗目標:製作光導開關同時量測它的特性參數。在暗電流 的量測方面，我們量測到"攝氏600度,30分鐘高溫爐管退火的砷離子佈植 砷化鎵"之光導開關的暗電流隨著佈植濃度的增加而越低。這是由於薄膜 中經過佈植後造成破壞的程度隨著佈植劑量的增加而增加，使得缺陷的濃 度也隨著增加。我們以外部電光取樣系統來量測元件的時域響應。我們量 測到質子轟擊式砷化鎵之共面波導傳輸線光導開關的時域響應; 其電脈衝 的寬度為2皮秒，上升時間為1.2皮秒。同時我們也量測到"攝氏600度,30 分鐘高溫爐管退火的砷離子佈植砷化鎵(佈植濃度條件:10^15 cm-2)"之共 面微條式傳輸線光導開關的時域響應;其電脈衝的寬度為4.4皮秒，上升時 間為2.2皮秒。 We have fabricated ultrafast photoconductive switches by using arsenic-ion-implanted GaAs (GaAs:As+)materials. Via thermal annealing process at tempera-ture of 600 ℃ in nitrogen flowing gas for 30 min, the dark current of the devi-ces are observed to be decreased as the implanting dosage increased. The concen-tration of defects induced during the implantation process are thought to be responsible for the phenomenon. By using an external electro-optic sampling systemwith a home-made electro-optic probe,we have characterized the temporal responseof proton-bombarded and arsenic-ion-implanted GaAs (10^15 ions/cm^2) switchesto be 2 and 4.4 ps at full-wave half maximum (FWHM), respectively.