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dc.contributor.author柳君岳en_US
dc.contributor.authorLeou, Jiun-Yuehen_US
dc.contributor.author褚德三en_US
dc.contributor.authorDer-San Chuuen_US
dc.date.accessioned2014-12-12T02:14:51Z-
dc.date.available2014-12-12T02:14:51Z-
dc.date.issued1995en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT840198003en_US
dc.identifier.urihttp://hdl.handle.net/11536/60218-
dc.description.abstract本研究利用射頻濺鍍製成各種不同錳離子濃度的硒化錳鋅薄膜,並研究其 特性.我們得到適當成長硒化錳鋅薄膜的條件.從掃描式電子顯微鏡看出其 薄膜晶粒的大小,並隨後退火時間的增加而變大;且隨錳離子濃度的增加而 變小.另外,由拉曼光譜的研究得到硒化錳鋅薄膜的TO及LO之振動模式. The ZnMnSe thin films with various Mn concentration were fabricated by using the RF sputtering technique with in-situ post annealing. We have obtained the optimum conditions to grow the ZnMnSe films. The grain size of as-deposited thin films could be varied by increasing the annealing time. We have also found the grain size decreased as the Mn concentration was increased. In addition, the Raman spectra investigation revealed some information to realize tht mode behavior of ZnMnSe alloy.zh_TW
dc.language.isozh_TWen_US
dc.subject射頻濺鍍zh_TW
dc.subject硒化錳鋅zh_TW
dc.subjectR.F. Sputteringen_US
dc.subjectZnMnSeen_US
dc.title利用射頻濺鍍製成硒化錳鋅薄膜及其特性的研究zh_TW
dc.titlestudies of ZnMnSe Thin Films prepared by R.F. Sputteringen_US
dc.typeThesisen_US
dc.contributor.department物理研究所zh_TW
Appears in Collections:Thesis