利用射頻濺鍍製成硫化鐵鎘薄膜

Abstract

本論文中的Cd1-xFexS薄膜是由雙槍射頻濺渡法所製備而成。在鍍膜過程中，控制不同的加熱溫度、退火溫度以及選擇不同的基板，得到適於成長硫化鐵鎘的條件。其Fe的濃度是由X-ray的能量色散分析儀 ( EDAX ) 所量測而得。晶格常數及晶格結構由X-ray繞射儀 ( XRD ) 所量得。薄膜的能帶結構和光學性質由光激發螢光譜 ( PL ) 所量得。薄膜的表面組織和晶粒大小由掃瞄式電子顯微鏡 ( SEM ) 所量得。材料內部的晶格振動及光學聲子的特性由Raman 光譜所量得。

The Cd1-xFexS films with various Fe concentration were deposited by radio frequency sputtering ( RF sputtering ) in this thesis. We controlled the deposition conditions: the substrate temperature, the period of in-situ post annealing and the different kind of substrate during the deposition process. The Fe concentration was determined by energy dispersive analysis of X-ray (EDAX) . Crystal structure and lattice constant were analyzed by X-ray diffraction (XRD) . Band structure and optical property were analyzed by photoluminescence (PL) . Surface morphology and grain size of the films were investigated with a scanning electron microscope (SEM) . The Raman spectroscopy is used to study the lattice vibration and optical phonon property of the films.