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dc.contributor.authorCheng, Hui-Wenen_US
dc.contributor.authorLi, Yimingen_US
dc.date.accessioned2014-12-08T15:07:40Z-
dc.date.available2014-12-08T15:07:40Z-
dc.date.issued2010en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/6031-
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.49.04DC09en_US
dc.description.abstractIn this work, we explore the effects of the number of fins and fin structure on the device DC, dynamic behaviors, and random-dopant-induced characteristic fluctuations of multifin field-effect transistor (FET) circuits. Multifin FETs with different fin aspect ratios [AR = fin height (H(fin))/fin width (W(fin))] and a fixed channel volume are simulated in a three-dimensional device simulation and the simulation results are experimentally validated. The multi-fin FinFET (AR = 2) has better channel controllability than the multifin trigate (AR = 1) and multi-fin quasi-planar (AR = 0.5) FETs. A six-transistor (6T) static random access memory (SRAM) using multi-fin FinFETs also provides the largest static noise margin because it supports the highest transconductance in FinFETs. Although FinFETs have a large effective device width and driving current, their large gate capacitance limits gate delay. The transient characteristics of an inverter with multi-fin transistors are further examined, and compared with those of an inverter with single-fin transistors. The multi-fin inverter has a shorter delay because it is dominated by the driving current of the transistor. With respect to random-dopant-induced fluctuations, the multifin FinFET suppresses not only the surface potential but also its variation because it has a more uniform surface potential than the multifin trigate and quasi-planar FET, and so the effects of random dopants on the circuits are attenuated. The results of this study provide insight into the DC, and circuit characteristics of multifin transistors and associated random dopant fluctuations. (C) 2010 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleComparative Study of Multigate and Multifin Metal-Oxide-Semiconductor Field-Effect Transistoren_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.49.04DC09en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume49en_US
dc.citation.issue4en_US
dc.contributor.department傳播研究所zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentInstitute of Communication Studiesen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000277301300049-
dc.citation.woscount0-
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