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dc.contributor.authorHan, Ming-Hungen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorHwang, Chih-Hongen_US
dc.date.accessioned2014-12-08T15:07:40Z-
dc.date.available2014-12-08T15:07:40Z-
dc.date.issued2010en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/6036-
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.49.04DC02en_US
dc.description.abstractIn this work, we carry out an experimental validated three-dimensional "atomistic'' device-circuit coupled simulation to study the discrete-dopant-induced power and delay fluctuations in 16-nm-gate complementary metal-oxide-semiconductor (CMOS) circuits. The equivalent gate oxide thicknesses (EOTs) of planar CMOS range from 1.2 nm to 0.2 nm. SiO(2) is used at gate oxide thicknesses of 1.2 and 0.8 nm, Al(2)O(3) at an EOT of 0.4 nm, and HfO(2) at an EOT of 0.2 nm. Under the same device threshold voltage, as EOT decreases from 1.2 to 0.2 nm, the fluctuations of threshold voltage and gate capacitance for CMOS transistors are reduced by 43 and 55%, respectively. For the state-of-art nanoscale circuits using high-dielectric constant (high-kappa) materials, the delay time fluctuation is suppressed significantly from 0.1 to 0.03 ps. For the power characteristics, although the nominal powers of circuits using high-kappa dielectrics are increased owing to the increased EOT, the fluctuations of dynamic power, short circuit power, and static power are reduced by 40, 70, and 30%, respectively. (C) 2010 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleDiscrete-Dopant-Induced Power-Delay Characteristic Fluctuation in 16 nm Complementary Metal-Oxide-Semiconductor with High Dielectric Constant Materialen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.49.04DC02en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume49en_US
dc.citation.issue4en_US
dc.contributor.department傳播研究所zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentInstitute of Communication Studiesen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000277301300042-
dc.citation.woscount1-
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