標題: | Double Photonic Quasi-Crystal Structure Effect on GaN-Based Vertical-Injection Light-Emitting Diodes |
作者: | Huang, Hung-Wen Lin, Chung-Hsiang Huang, Zhi-Kai Lee, Kang-Yuan Yu, Chang-Chin Kuo, Hao-Chung 光電工程學系 Department of Photonics |
公開日期: | 2010 |
摘要: | GaN-based thin-film vertical-injection light-emitting diodes (VLEDs) with a double 12-fold photonic quasi-crystal (PQC) structure formed using nanoimprint lithography (NIL) and inductively coupled plasma reactive-ion etching (ICP-RIE) are fabricated and presented. At a driving current of 20 mA and with a chip size of 350 x 350 mu m(2), our thin-film LED with a double-12-fold-PQC structure gave a light output power of 40.5 mW, which is an increase of 77% when compared with the output power of a VLED without a PQC structure at a peak wavelength of 460 nm. In addition, the corresponding light radiation patterns show a narrow beam shape due to the strong guided light extraction on the n-GaN surface and the reflected light effect of the PQC structure formed in the vertical direction on the p-GaN surface. (C) 2010 The Japan Society of Applied Physics |
URI: | http://hdl.handle.net/11536/6037 http://dx.doi.org/10.1143/JJAP.49.022101 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.49.022101 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS |
Volume: | 49 |
Issue: | 2 |
顯示於類別: | 期刊論文 |