Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Huang, Hung-Wen | en_US |
dc.contributor.author | Lin, Chung-Hsiang | en_US |
dc.contributor.author | Huang, Zhi-Kai | en_US |
dc.contributor.author | Lee, Kang-Yuan | en_US |
dc.contributor.author | Yu, Chang-Chin | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.date.accessioned | 2014-12-08T15:07:40Z | - |
dc.date.available | 2014-12-08T15:07:40Z | - |
dc.date.issued | 2010 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/6037 | - |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.49.022101 | en_US |
dc.description.abstract | GaN-based thin-film vertical-injection light-emitting diodes (VLEDs) with a double 12-fold photonic quasi-crystal (PQC) structure formed using nanoimprint lithography (NIL) and inductively coupled plasma reactive-ion etching (ICP-RIE) are fabricated and presented. At a driving current of 20 mA and with a chip size of 350 x 350 mu m(2), our thin-film LED with a double-12-fold-PQC structure gave a light output power of 40.5 mW, which is an increase of 77% when compared with the output power of a VLED without a PQC structure at a peak wavelength of 460 nm. In addition, the corresponding light radiation patterns show a narrow beam shape due to the strong guided light extraction on the n-GaN surface and the reflected light effect of the PQC structure formed in the vertical direction on the p-GaN surface. (C) 2010 The Japan Society of Applied Physics | en_US |
dc.language.iso | en_US | en_US |
dc.title | Double Photonic Quasi-Crystal Structure Effect on GaN-Based Vertical-Injection Light-Emitting Diodes | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.49.022101 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 49 | en_US |
dc.citation.issue | 2 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000275665700029 | - |
dc.citation.woscount | 3 | - |
Appears in Collections: | Articles |
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