標題: Stability of La(2)O(3) Metal-Insulator-Metal Capacitors under Constant Voltage Stress
作者: Wu, Shu-Hua
Deng, Chih-Kang
Hou, Tuo-Hung
Chiou, Bi-Shiou
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-2010
摘要: In this study, we demonstrate the stability of high-kappa La(2)O(3) metal-insulator-metal (MIM) capacitors under constant voltage stress (CVS). It was found that the variation in capacitance caused by CVS strongly depends on the injected charges regardless of stress biases. Furthermore, the quadratic voltage coefficient of capacitance (alpha) decreases with a logarithmic increase in dielectric loss. Charge trapping contributes to the relative capacitance variation under CVS while the reduced carrier mobility due to the stress-induced traps is responsible for the reduction of alpha. Additionally, high stability of 10-year lifetime is achieved for a 10-nm La(2)O(3) MIM capacitor with an 11.4 fF/mu m(2) capacitance density. (C) 2010 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/JJAP.49.04DB16
http://hdl.handle.net/11536/6054
ISSN: 0021-4922
DOI: 10.1143/JJAP.49.04DB16
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 49
Issue: 4
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