標題: | An innovative understanding of metal-insulator-metal (MIM)-capacitor degradation under constant-current stress |
作者: | Hung, Chi-Chao Oates, Anthony S. Lin, Horng-Chih Chang, Yu-En Percy Wang, Jia-Lian Huang, Cheng-Chung Yau, You-Wen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | capacitance;constant-current stress (CCS);interface;metal-insulator-metal (MIM) |
公開日期: | 1-九月-2007 |
摘要: | This paper provides a new understanding of metal-insulator-metal-capacitor-degradation behavior under a wide range of constant-current-stress conditions. It was found that capacitance degrades with stress, but the behavior of the degradation strongly depends on the stress-current density. At high stress levels, the capacitance increases logarithmically as the injection charge increases until dielectric breakdown occurs. At lower stress conditions, the degradation rate is proportional to the stress current and reverses after a certain period of time. A metal-insulator interlayer is observed using cross-sectional transmission-electron-microscopy micrographs, which possibly explains this reversal phenomenon. |
URI: | http://dx.doi.org/10.1109/TDMR.2007.907406 http://hdl.handle.net/11536/10355 |
ISSN: | 1530-4388 |
DOI: | 10.1109/TDMR.2007.907406 |
期刊: | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY |
Volume: | 7 |
Issue: | 3 |
起始頁: | 462 |
結束頁: | 467 |
顯示於類別: | 期刊論文 |