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dc.contributor.authorWu, Shu-Huaen_US
dc.contributor.authorDeng, Chih-Kangen_US
dc.contributor.authorHou, Tuo-Hungen_US
dc.contributor.authorChiou, Bi-Shiouen_US
dc.date.accessioned2014-12-08T15:07:42Z-
dc.date.available2014-12-08T15:07:42Z-
dc.date.issued2010-01-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.49.04DB16en_US
dc.identifier.urihttp://hdl.handle.net/11536/6054-
dc.description.abstractIn this study, we demonstrate the stability of high-kappa La(2)O(3) metal-insulator-metal (MIM) capacitors under constant voltage stress (CVS). It was found that the variation in capacitance caused by CVS strongly depends on the injected charges regardless of stress biases. Furthermore, the quadratic voltage coefficient of capacitance (alpha) decreases with a logarithmic increase in dielectric loss. Charge trapping contributes to the relative capacitance variation under CVS while the reduced carrier mobility due to the stress-induced traps is responsible for the reduction of alpha. Additionally, high stability of 10-year lifetime is achieved for a 10-nm La(2)O(3) MIM capacitor with an 11.4 fF/mu m(2) capacitance density. (C) 2010 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleStability of La(2)O(3) Metal-Insulator-Metal Capacitors under Constant Voltage Stressen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.49.04DB16en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume49en_US
dc.citation.issue4en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
Appears in Collections:Articles