標題: | Stability of La(2)O(3) Metal-Insulator-Metal Capacitors under Constant Voltage Stress |
作者: | Wu, Shu-Hua Deng, Chih-Kang Hou, Tuo-Hung Chiou, Bi-Shiou 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-一月-2010 |
摘要: | In this study, we demonstrate the stability of high-kappa La(2)O(3) metal-insulator-metal (MIM) capacitors under constant voltage stress (CVS). It was found that the variation in capacitance caused by CVS strongly depends on the injected charges regardless of stress biases. Furthermore, the quadratic voltage coefficient of capacitance (alpha) decreases with a logarithmic increase in dielectric loss. Charge trapping contributes to the relative capacitance variation under CVS while the reduced carrier mobility due to the stress-induced traps is responsible for the reduction of alpha. Additionally, high stability of 10-year lifetime is achieved for a 10-nm La(2)O(3) MIM capacitor with an 11.4 fF/mu m(2) capacitance density. (C) 2010 The Japan Society of Applied Physics |
URI: | http://dx.doi.org/10.1143/JJAP.49.04DB16 http://hdl.handle.net/11536/6054 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.49.04DB16 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS |
Volume: | 49 |
Issue: | 4 |
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顯示於類別: | 期刊論文 |