質子佈植端面漸細型條狀雷射二極體之研究

Abstract

質子佈植端面漸細型條狀雷射二極體之研究 中 文 摘 要 此論文中，我們以改變氫原子佈植能量為基礎，製作各種不同的端 面漸 細型條狀增益波導雷射，量測其輸出光束性質，並與直條型雷射 比較優 劣。另外，也討論了以氫分子佈植所製作之雷射的結果。 實驗結 果顯示，佈植的劑量為5e14/cm2時在120keV附近是最 佳的氫原子 佈植能量，其氫原子分布的尖峰距離主動層約0.9至 1um。也發現6 um寬的直條型雷射有最小的像散像差，甚至超越端 面漸細型雷射的 表現。在我們所有的端面漸細型雷射中，其光束的遠 場性質，以180keV 氫原子佈植中央線寬為6um端面漸細型雷射，最 能維持橫向基本模態 ，意謂橫向模控制的機制的確發生效用。此外， 中央線寬為6um及8um的 端面漸細型雷射，其縱向模態較容易受到 空間燒洞效應的影響。我 們也發現，氫分子佈植由於穿透深度較淺， 所製作的雷射其輸出特性較 氫原子佈植者差。 We present here our studies on the fabrication and beam characteristics of hydrogen(proton)-implanted gain-guided tapered stripe laser diodes. By controlling different hydrogen implantation energy and tapered-stripe dimension, we fabricated various tapered stripe lasers. Then we measured their output beam properties and compared with that of narrow stripe lasers. We find the optimum hydrogen implantation energy is near 120keV. Its hydrogen distribution peak is 0.9um to 1.0um far from the active region. On the aspect of astigmatism aberration, we find that the 6um narrow stripe laser has the smallest Seidel astigmatism coefficient. Also, it is shown that the tapered stripe structure is successfully in the lateral mode controlling and the tapered laser with central section 6um wide fabricated by 180keV hydrogen implantation is the best to maintain Gaussian fundamentalode. The longitudinal mode purity is influenced by the spatial-hole burning effect. Finally, from our experiment results, the hydrogen implantation is better than that by hydrogen molecule.