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dc.contributor.authorHsieh, C. R.en_US
dc.contributor.authorLai, C. H.en_US
dc.contributor.authorLin, B. C.en_US
dc.contributor.authorLou, J. C.en_US
dc.contributor.authorLin, J. K.en_US
dc.contributor.authorLai, Y. L.en_US
dc.contributor.authorLai, H. L.en_US
dc.date.accessioned2014-12-08T15:07:43Z-
dc.date.available2014-12-08T15:07:43Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-0636-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/6057-
dc.description.abstractWhen the thickness of tunnel oxide layer is thinner than 7nm, the defects of tunnel oxide will form the leakage path easily. The trapped charges in trapping layer leak out through the leakage path and let we read the wrong data information. Therefore, the novel oxynitride process has been proposed to improve the reliabilities of Flash memory by reducing the interface states and bulk defects. Moreover, the novel oxynitride process is compatible with standard CMOS process today and it is practicable improvement in industry manufacturing. The HfO(2) layer was used as charge trapping layer. At first we found the better PDA conditions of HfO(2) film from the test capacitors and applied the optimum condition in integrated Flash memory devices. Finally, the complete electrical measurements and analysis were carried out. From the result of this study, the oxynitride can promote the reliabilities of Flash memory by improving the quality of tunnel oxide.en_US
dc.language.isoen_USen_US
dc.titleNovel oxynitride layer applied to flash memory using HfO(2) as charge trapping layeren_US
dc.typeArticleen_US
dc.identifier.journalEDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGSen_US
dc.citation.spage629en_US
dc.citation.epage632en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000254170700158-
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