HfO2 Trap Layer Nonvolatile Flash Memory on SiGe Channel

Abstract

This paper study a novel nonvolatile memory by using HfO2 trapping layer on epi-SiGe (Ge: 15%) channel. Because SiGe has a smaller bandgap than that of silicon, it can increases the electron/hole injection and enhances the program/erase speed. This study compares the characteristics of HfO2 memories with different tunnel oxynitride thicknesses on epi-SiGe substrate. The results show that the nonvolatile memory has superior characteristics in terms of considerably large memory window, high speed program/erase, long retention time, good endurance for future low power applications.