矽基光偵測器二極體陣列

Abstract

在此論文中,主要是探討具有耦合電容、圍繞式歐姆接觸和網狀電極之矽 基二極體陣列之光偵測器的設計與實現。使用網狀電極可避免長波長之入 射光部份反射,使進入二極體的光通量增加。此外利用圍繞式歐姆接觸可 減低電荷在表面的結合,增加光電流。藉由電性量測與照光試驗,我們證實 具有圍繞式歐姆接觸和網狀電極的光偵測器有較佳的電性。在空間響應也 有良好的絕緣。 This thesis deals with the design and implementation of a silicon-based photo-detector diode array with capacitive readout, surrounding contact and mesh electrode. The mesh electrode is used to prevent the reflection of incidentlight in long wavelength. In addition, the surrounding contact is used to reduce surface recombination. The detectors are tested by electrical measurement and illumination of different light sources. From the resultsof the electrical properties and spatial response, we demonstrate that photo-detector with surrounding contact and mesh electrode have large quantum efficiency. The characteritic of electrical isolation is acceptable for detector application.