完整後設資料紀錄
DC 欄位語言
dc.contributor.author蔣敏雄en_US
dc.contributor.authorChiang, Min-Hsiungen_US
dc.contributor.author蘇翔en_US
dc.contributor.authorSu Shyangen_US
dc.date.accessioned2014-12-12T02:15:34Z-
dc.date.available2014-12-12T02:15:34Z-
dc.date.issued1995en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT840430048en_US
dc.identifier.urihttp://hdl.handle.net/11536/60649-
dc.description.abstract本文主旨在研製X光微影技術中所需之X光光罩,其以多矽氮化矽為鼓膜 並選擇鎢及金為X光之吸收劑材料。為了提高步進機在光罩與晶圓間之對 準能力,必需改善鼓膜之穿透率,為此,我們調整低壓化學氣相沉積系統 沉積鼓膜時之條件,並在鼓膜上覆蓋一層抗反射層,藉由這兩種方法可使 鼓膜之穿透率獲得明顯改善。另一方面,為了避免鼓膜在實驗過程中因吸 收劑應力過大而破裂,我們歸納出最合適之濺鍍條件,使吸收劑具有很小 之應力及應力變化。此外,本研究已建立X光光罩之完整製程,並且能使 低張力、高穿透率鼓膜之面積達到 6cm × 6cm 。 This thesis presents the fabrication and experimental results of x-ray mask inx-ray lithography. The silicon-rich nitride is used as membrane and tungsten and gold are studied as absorbers. In order to increase the ability of opticalalignment between mask and wafer in the SR stepper, it is necessary to improvethe transmittance of membrane. For this reason,recipe of low- pressure chemicalvapor deposition (LPCVD) system for membrane deposition was constructured and deposition of anti-reflective coating (ARC) on membrane was also performed. Onthe other hand, the suitable recipes of sputtering with low-stress absorber were adopted to avoid ruinning the membrane during experiments. In this resea-rch, the process procedure of x-ray mask was accomplished and 6cm*6cm membranewith low tensile stress and optical transmittance up to square was available.zh_TW
dc.language.isozh_TWen_US
dc.subject多矽氮化矽zh_TW
dc.subject鼓膜zh_TW
dc.subject抗反射層zh_TW
dc.subject吸收劑zh_TW
dc.subjectzh_TW
dc.subject鍍金zh_TW
dc.subjectsilicon-rich nitrideen_US
dc.subjectmembraneen_US
dc.subjectanti-reflective coatingen_US
dc.subjectabsorberen_US
dc.subjecttungstenen_US
dc.subjectgold platingen_US
dc.titleX光光罩多矽氮化矽鼓膜及吸收劑之研究zh_TW
dc.titleDevelopment of silicon-rich nitride membrane and absorber for x- ray masken_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
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