完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 魏正泉 | en_US |
dc.contributor.author | Wei, Zin-Chein | en_US |
dc.contributor.author | 鄭晃忠 | en_US |
dc.contributor.author | Cheng Huang-Chung | en_US |
dc.date.accessioned | 2014-12-12T02:15:34Z | - |
dc.date.available | 2014-12-12T02:15:34Z | - |
dc.date.issued | 1995 | en_US |
dc.identifier.uri | http://140.113.39.130/cdrfb3/record/nctu/#NT840430052 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/60653 | - |
dc.description.abstract | 由於高密度元件為矽金屬二氧化矽閘場效積體電路未來的趨勢, 我們必須 縮小佈局中的線寬距離, 結果形成填隙的製程將越來越重要. 例如在自動 對準窗蝕刻的製程技術中, 就需要一層填隙能力好的薄膜. 我發現使用大 氣壓式與半大氣壓式下合成臭氧與TEOS形成之二氧化矽有高度的可能性可 以達到這個要求我們都知道TEOS與臭氧合成的二氧化矽, 廣泛應用於半導 體製程中的平坦化與 填補金屬層或淺溝間隙, 但未有在複晶層有研究. 因此 本篇乃針對使用大氣壓式與半大氣壓式化學氣相沉積法, 成長二氧 化矽應用於多層複晶製程上填隙能力進行研究, 這是對未來半導體製程 極有價值的實驗. Since high-density device MOSFET IC is required in the future, we need to shrink line width as well as spacing to deep submicrometer. As a result, the gap-fill process becomes more and more important. For example, in the IPO ( Inter Poly Oxide) layer of SAC (Self-Alignment Contact hole etching technology ) which needs a good gap-fill-capability films. We found that APCVD(Atmoshoric Pressure Chemical Vapor Deposition) TEOS (TetraEthlOrthoSilicate; Si(O C2H6)4/ O3 ( Ozone) USG(Un-doped Silicon Glass) and SACVD O3-TEOS/SiO2 for Mult-poly". | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.subject | 二氧化矽 | zh_TW |
dc.subject | 氣相沉積 | zh_TW |
dc.subject | 半導體製程 | zh_TW |
dc.subject | 臭氧 | zh_TW |
dc.subject | 薄膜 | zh_TW |
dc.subject | 填隙 | zh_TW |
dc.subject | O3 | en_US |
dc.subject | TEOS | en_US |
dc.subject | APCVD | en_US |
dc.subject | SACVD | en_US |
dc.subject | FILM | en_US |
dc.subject | Gap-fill | en_US |
dc.title | 使用大氣壓式與半大氣壓式化學氣相沉積法成長二氧化矽應用於多層複晶製程上填隙能力之研究 | zh_TW |
dc.title | Study of the Gap-Fill Capability of APCVD and SACVD O3-TEOS /SiO2 for Multi-Poly Process | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | 電子研究所 | zh_TW |
顯示於類別: | 畢業論文 |