低電壓互補式金氧半射頻前端之低雜訊放大器及帶通濾波器設計與分析

Abstract

在本篇論文裡提出一個以互補式金氧半元件為製成技術的射頻前端接收器 ，包含一個低雜訊放大器及一高品質因素帶通濾波器。一般晶片內建電感 受其寄生電阻的影響，系統所能得到的品質因素不能提高。本篇使用一主 動並聯式負電阻補償方式，將品質因素及晶片內建電感的值皆可藉外加電 壓調整。製成於零點八微米互補式金氧半，低雜訊放大器在九百萬赫茲工 作頻率處有八分貝的增益且將訊號由單端到地轉為雙端差動輸出，工作電 壓為三伏特，其噪音係數為四點八分貝。高品質因素帶通濾波器調其中心 頻率於九百萬赫茲、工作電壓三伏特時，噪音係數為八點五分貝、中心增 益為三十分貝於品質因素為六十。高品質因素帶通濾波器中心頻率可調為 一千八百萬赫茲於零點五微米互補式金氧半製程中。 An CMOS RF Front-End IC containing a low noise amplifier and high-Q bandpass filter is described. Due to the resistive losses of on-chip inductors, the achievable quality factors in passive filters are low. In this thesis, we will discuss a method for making possible the active parallel-mode compensation of on-chip inductor and capacitor losses and for making both the quality factor and the inductance value electronically tunable. Realized in a 0.8(m CMOS process, the low noise amplifier gain at 900MHz is 8dB from single-ended signal input to differential single output for vdd = 3volts. The noise figure is under 4dB around 900MHz. The bandpass filter under vdd = 3volts was tuned to a center frequency of 900MHz with a quality factor of 60. The measurement noise figure was 7.8dB and the power gain at the center frequency was 30dB. The center frequency could be tuned up to 1.8GHz under a 0.5(m CMOS process.