短閘長矽/二氧化矽金屬半導體場效電晶體的新解析模式及縮小理論

Abstract

本論文提出一個新的矽/二氧化矽金屬半導體場效電晶體結構，並針對自 我對準、完全空乏結構之短閘長金屬半導體場效電晶體，應用雙區域格林 函數解法，精確求得二維帕松方程式之解，據以建立其二維電位分佈、次 臨界電流、臨界電壓、能障降低因素之解析模式。基於這些解析模式所提 供的元件物理瞭解，我們更進一步提出了以能障降低因素為縮小規範的元 件縮小理論，並以一閘長度 0.1微米的矽/二氧化矽金屬半導體場效電晶 體為例，驗證此縮小理論，結構參數單純且可層次化縮小設計，充分顯示 了矽/二氧化矽金屬半導體場效電晶體之優勢。另外，我們也以二維數值 模擬分析為工具，考慮次臨界與導通區域特性，提出一個設計策略。 This dissertation presents a new Si-SOI MESFET structure. Using a two-zone Green's function solution method, the exact solutions of 2-D Poisson's equation in both silicon film and buried oxide are obtained. The analytic models for the self- aligned, fully depleted Si-SOI MESFET including 2-D potential distribution, subthreshold current, threshold voltage, and DIBL factor are established. Based on the physical pictures provided by these analytic models, the scaling theory using the DIBL factor as a scaling criterion is suggested and a 0.1 um device is taken as an example to verify this scaling theory. In addition, a design strategy based on 2-D numerical analysis is proposed which considers both the subthreshold and turn-on characteristics. The simplicity and hierarchy of device design and scaling reveal the superiority of Si-SOI MESFET.