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dc.contributor.author侯錦珊en_US
dc.contributor.authorHou ,Chin-Shanen_US
dc.contributor.author吳慶源en_US
dc.contributor.authorChing-Yuan Wuen_US
dc.date.accessioned2014-12-12T02:15:40Z-
dc.date.available2014-12-12T02:15:40Z-
dc.date.issued1995en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT840430125en_US
dc.identifier.urihttp://hdl.handle.net/11536/60734-
dc.description.abstract本論文提出一個新的矽/二氧化矽金屬半導體場效電晶體結構,並針對自 我對準、完全空乏結構之短閘長金屬半導體場效電晶體,應用雙區域格林 函數解法,精確求得二維帕松方程式之解,據以建立其二維電位分佈、次 臨界電流、臨界電壓、能障降低因素之解析模式。基於這些解析模式所提 供的元件物理瞭解,我們更進一步提出了以能障降低因素為縮小規範的元 件縮小理論,並以一閘長度 0.1微米的矽/二氧化矽金屬半導體場效電晶 體為例,驗證此縮小理論,結構參數單純且可層次化縮小設計,充分顯示 了矽/二氧化矽金屬半導體場效電晶體之優勢。另外,我們也以二維數值 模擬分析為工具,考慮次臨界與導通區域特性,提出一個設計策略。 This dissertation presents a new Si-SOI MESFET structure. Using a two-zone Green's function solution method, the exact solutions of 2-D Poisson's equation in both silicon film and buried oxide are obtained. The analytic models for the self- aligned, fully depleted Si-SOI MESFET including 2-D potential distribution, subthreshold current, threshold voltage, and DIBL factor are established. Based on the physical pictures provided by these analytic models, the scaling theory using the DIBL factor as a scaling criterion is suggested and a 0.1 um device is taken as an example to verify this scaling theory. In addition, a design strategy based on 2-D numerical analysis is proposed which considers both the subthreshold and turn-on characteristics. The simplicity and hierarchy of device design and scaling reveal the superiority of Si-SOI MESFET.zh_TW
dc.language.isoen_USen_US
dc.subject矽/二氧化矽; 金屬半導體場效電晶體; 格林函數; 解析模式.zh_TW
dc.subjectSOI; MESFET; Green's function; analytic model.en_US
dc.title短閘長矽/二氧化矽金屬半導體場效電晶體的新解析模式及縮小理論zh_TW
dc.titleNew Analytic Models and Scaling Theory for Short Gate-Length Si-SOIMESFET'sen_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
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