微波單晶積體電路中高品質因數電感器之設計與研製

Abstract

本文主旨在闡述微波單晶積體電路中所需之高品質因數電感器的設計、研 製與實驗結果。藉由於氮化矽鼓膜上佈局微帶線螺旋式電感器的新結構， 改變微波傳輸的介質損耗，並降低寄生電容，進而提高共振頻率，增加品 質因數。而其等效電路亦見於本文中。實驗結果証實本鼓膜式電感的確具 有與事先電腦模擬相稱之改進作用，使得共振頻率為 1.65 GHz 之高感值 （130 nH）電感器亦能同時擁有高品質因數（12），而本電感器之特性也 能經由等效模型來準確地描述。此外，本研究亦發展出多層金屬接線及低 張力鼓膜層的製做技術，可為往後微波、毫米波甚且微機電系統元件的研 製所廣泛應用o Planar microwave inductors are fabricated on a dielectric membrane to reduce the parasitic capacitance to ground. The fabricated inductors were characterized by using HP8510B network analyzer. The resonant frequency of both 113 nH and 130 nH membrane inductor have been pushed from 0.95 and 0.80 GHz to 1.80 and 1.65 GHz, and the Q value have been increased from 4.8 and 5 to 9 and 12, respectively. An equivalent model has been established to characterizes membrane inductors successfully by good S-parameters curve fittings with measurements and the optimization routine used in this work are TOUCHSTONE (R) and LIBRA(R) software. Besides, the techniques of the formations of low tensile stress membranes and multilayer metal interconnections were well developed to achieved the structure of membrane inductors.