以垂直布氏長晶法生長AgGa(SxSel-x)2單晶及其性質研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	張惠林	en_US
dc.contributor.author	Zhang, Hui-Lin	en_US
dc.contributor.author	張秉衡	en_US
dc.contributor.author	Zhang, Bing-Heng	en_US
dc.date.accessioned	2014-12-12T02:16:16Z	-
dc.date.available	2014-12-12T02:16:16Z	-
dc.date.issued	1995	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#NT844058002	en_US
dc.identifier.uri	http://hdl.handle.net/11536/61137	-
dc.description.abstract	The AgGa(SxSel-x)2 system form complete series of solid solution, we use the method of vertical Bridgeman to grow AgGa( SxSel-x)2 single crytals, the valueof x equals 0, 0.25 of 0.75.	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	電子微探儀	zh_TW
dc.subject	材料科學	zh_TW
dc.subject	物理	zh_TW
dc.subject	EPMA	en_US
dc.subject	MATERIALS-SCIENCE	en_US
dc.subject	PHYSICS	en_US
dc.title	以垂直布氏長晶法生長AgGa(SxSel-x)2單晶及其性質研究	zh_TW
dc.title	THE GROWTH AND CHARACTERIZATION OF AgGaS(SxSel-x)2 SINGLE C	en_US
dc.type	Thesis	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
顯示於類別：	畢業論文