标题: | 砷化锭铝萧基二极体的低温制备及电性量测 ELECTRICAL CHARACTERIZATION OF LOW-TEMPERATURE FABRICATED SCHOTTKY DIODES ON ALGaAs |
作者: | 曾晓晖 Zeng, Xiao-Hui 杨赐麟 Yang, Si-Lin 电子物理系所 |
关键字: | 电子物理;电子工程;萧基二极体;电流密度;电容;电压;萧基接面;砷化镓铝;低温;ELECTROPHYSICS;ELECTRONIC-ENGINEERING;Schottky Barrier Height;AlGaAs;Low Temperature |
公开日期: | 1995 |
摘要: | In this study, we prepared and characterized Au( or Pd)/n-AlGaAs Schottky diodes by using low-temperature(LT;T=77 K) process, current-voltage(I-V), and capacitance-voltage(C-V) measurements. The leakage current density is reduced half for the diodes fabricated by low-temperature process compared with which fabricated at room temperature(RT), corresponding to an increase of Schottky barrierheight to be around 40 meV. For an Au/Al0.28Ga0.72As sample, the saturationcurrent density is reduced from 6.4E-12 for RT preparation to 2.4E-12(A/cm2) forLT processing. The C-V measurements for RT diodes indicate that the barrier height is raised from 1.17eV for RT diodes to 1.20eV for LT diodes. In addition,we demonstrated that Se doping can be used to improved the quality of AlGaAs films by comparing the barrier heights and saturation current densities of RT and LT Schottky diodes made on Al0.3Ga0.7As epilayers. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT844429005 http://hdl.handle.net/11536/61237 |
显示于类别: | Thesis |