使用高能量氦、硼及氧離子佈植於砷化鎵/砷化鋁鎵/硼化鎵磊晶層結構之絕緣性質研究

Abstract

本論文主題為研究藉由氧/氦、硼及氧離子多種能量離子 佈值於砷化 鎵/砷化鋁鎵磊晶結構中所造成高阻值電性 之研究。本論文結果顯 示在製造砷化鎵/砷化鋁鎵高阻值 區的絕緣技術方面，絕緣層多重能 量離子佈值是相當有 用。使用此種離子佈值於異質性接面電晶體磊 晶層形成 高於105Ω-cm的絕緣區，此結果在本文中以二次離子質 譜儀的離子縱深圖及逐步升高的退火溫度（加溫範圍： 280℃~750 ℃）與阻值間相對關係詳加闡述和驗證。 藉由氧/氦離子相互配合所佈值的試片在退火溫度360 ℃時到達相 當好絕緣特性：相距25微米的兩個元件區 域，集層加電壓至29伏 特時，漏電流僅1微安培。在 此實驗中試片為1.63微米厚的異質 接面結構，為使其達 到完全絕緣效果，我們使用氧離子及氦離子各 佈值四種 不同能量，以有效地抑制導電載子，達到完全絕緣效 果。在此試驗中，氧離子的佈值能量範圍從80到200 仟電子伏特 ，而氦離子則從80到450仟電子伏特。每 單位面積（厘米平方） 離子濃度則在十的十三次方到十 五次方之間。 本論文亦同使用 硼離子和氧離子佈值 以為絕緣研究，它們也都達到類似的結果。 The electrical properties of the high resistance layers in the GaAs / AlGaAs epi-layer structure produced by O+ / He+ , B+ and O+ multi - energy ion implantation have been studied . It was shown that the multi-energy ion implantation is useful for device isolation technology to create a high-resistance layer in the GaAs / AlGaAs epi-layer . The formation of the high- resistance ( > 105Ω-cm ) region in the heterojuntion bipolar transistor ( HBT ) GaAs / AlGaAs structures by ion implantation has been investigated with the ion profiles of the SIMS as a function of subsequent annealing at different temperature ( 280 ~ 750℃ ) . The simple co-implanted by O+ / He+ shows the good isolation after annealing at 360℃. An isolation leakage current as low as 1μA at 29V bias in the collector layer can be achieved between two active regions separated by a 25 μm spacing. The isolation of these 1.63 μm-thick heterojunctions structure was aciieved by oxygen implants with four different energies ( 80~200keV ) and helium implants with four different energies (80~450keV ) . The range of the dose used is from 10e13 to 10e15cm-2 . Similar result was achieved using these boron and oxygen implantation .