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dc.contributor.author呂政祐en_US
dc.contributor.authorue, Jenq-Yowen_US
dc.contributor.author宋開泰en_US
dc.contributor.authorKai-Tai Songen_US
dc.date.accessioned2014-12-12T02:17:10Z-
dc.date.available2014-12-12T02:17:10Z-
dc.date.issued1996en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT850327054en_US
dc.identifier.urihttp://hdl.handle.net/11536/61711-
dc.description.abstract在本文中,我們對快速熱程序之溫度量測系統做了完整的研究,並針對紅 外線高溫計的感測技術,提出了放射率補償的方法,以能提供正確的溫度 給予控制系統做閉迴路的動態控制。我們首先進行快速熱程序在半導體製 造的技術分析,其關鍵技術在晶圓溫度之一致性與重現性之達成。為了發 展紅外線高溫計量測技術,我們在實驗室設立一套晶圓加溫與控溫設備, 並自行設置了紅外線高溫計量測系統。實驗結果顯示,我們所提出之放射 率補償設計可以有效降低因放射率變化所造成之量測誤差。 In this thesis, we surveyed the temperature sensing system of rapid thermalprocessing(RTP). The main problems of RTP are the uniformity and repeatability of wafer temperaturein the process of manufacturing. In order to overcome these problems, closed- loop temperature control of RTPsystem is required. The temperature sensing system is the key technology for control system design.We developed in this thesis a wafer temperature sensing system using infrared temperature sensor. A method for on-line emissivity compensation was proposed. Experimental resultsshow that our method can reduce the error caused by temperature dependent variation in emissivity effectively.zh_TW
dc.language.isozh_TWen_US
dc.subject快速熱程序zh_TW
dc.subject紅外線高溫計zh_TW
dc.subject半導體製造設備zh_TW
dc.subject放射率補償zh_TW
dc.subject溫度量測zh_TW
dc.subjectrapid thermal processingen_US
dc.subjectpyrometeren_US
dc.subjectsemiconductor manufacturing equipmentsen_US
dc.subjectemissivity compensationen_US
dc.subjecttemperature measurementen_US
dc.title快速熱程序之溫度感測系統zh_TW
dc.titleStudy of temperature sensing system of rapid thermal processingen_US
dc.typeThesisen_US
dc.contributor.department電控工程研究所zh_TW
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