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dc.contributor.authorKuo, Po-Yien_US
dc.contributor.authorHuang, Yan-Syueen_US
dc.contributor.authorLue, Yi-Hsienen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.authorLei, Tan-Fuen_US
dc.date.accessioned2014-12-08T15:07:50Z-
dc.date.available2014-12-08T15:07:50Z-
dc.date.issued2010en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/6173-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3258283en_US
dc.description.abstractn- and p-channel poly-Si thin-film transistors with fully Ni-self-aligned silicided (fully Ni-salicided) source/drain (S/D) and gate structure (n- and p-channel FUSA-TFTs) have been successfully fabricated on a 40 nm thick channel layer. The conventional poly-Si gate is replaced by the fully Ni-silicided gate, and the parasitic S/D resistance of the FUSA-TFTs is significantly reduced by the fully Ni-silicided S/D structure. The fully Ni-salicidation process is executed at a low temperature of 500 degrees C for a short rapid thermal annealing time. Experimental results show that the FUSA-TFTs give increased on/off current ratio, improved subthreshold characteristics, less threshold voltage roll-off, lower parasitic S/D resistance, higher gate capacitance, and larger field-effect mobility than conventional TFTs. The FUSA-TFTs effectively suppress the floating-body effect and parasitic bipolar junction transistor action. The characteristics of the FUSA-TFTs are suitable for three-dimensional integration applications and high performance driver circuits in the active-matrix liquid crystal displays. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3258283] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleThe Characteristics of n- and p-Channel Poly-Si Thin-Film Transistors with Fully Ni-Salicided S/D and Gate Structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3258283en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume157en_US
dc.citation.issue1en_US
dc.citation.spageH113en_US
dc.citation.epageH119en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000272387200097-
dc.citation.woscount2-
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