以SiH2Cl2成長之選擇性磊晶

Abstract

我們使用低壓汽相沉積(LPCVD)系統,使其在750∼800℃的低溫條件下,成 長高品質的磊晶矽薄膜.我們利用穿透式電子顯微鏡(TEM)和二極體,金氧 半場效電晶體的製作來檢視其選擇性磊晶矽薄膜的品質. 如何去降低系 統內水汽及氧氣含量是低溫選擇性磊晶矽成長 的成功準則,因為我們系統 沒有超高真空的渦輪幫浦及預置載入-鎖住裝置,我們使用每分鐘6公升的 高流量氫氣及在850∼900℃的預烤來達到高品質的選擇性磊晶成長.我們 的低壓汽相沉積系統在900℃的預烤溫度下,其最低溫的選擇性磊晶矽成長 為750℃.由我們的實驗結果說明了低壓汽相沉積系統在低溫下同樣能夠得 到高品質的選擇性矽磊晶. We have used the low pressure chemical vapor deposition (LPCVD) reactor system to growth high quality selective epitaxy silicon film at a low temperature of 750∼800℃. The quality of epitaxy silicon film is investigated by cross-sec-tion transmission electron microscopy (TEM) and the fabrication of diode and MOSFET. Reduction the concentration of moisture and oxygen in the LPCVD system is cri- tical to the success of growth at low selective growth temperatures. Because there are no high vacuum pump and load-lock used in the LPCVD system, a high f-low rate of 6 slm of H2 purge and a low prebake temperature 850∼900℃ has b-een used to achieve the high quality selective epitaxial growth.The lowest temperature for selective growth is 750℃ at a 900℃ prebake tempe-rature in the LPCVD system. Our results indicates simple system designed LPCVD system can also achieve high quality selective Si epitaxy at low temperature.