以ELO技術移植InGaAs/GaAs/AlGaAs雷射二極體於矽基板上之特性研究

Abstract

本論文中, 我們成功的製作出脊狀波導(RWG)漸變光導係數侷限 層(GRIN-SCH)扭曲層單量子井(SQW)雷射二極體, 並以磊晶層剝離(ELO)技 術將雷射移植至矽基板上. 對於脊狀波導結構, 以及漸變光導係數侷限層 結構的基本原理及其設計上的考量, 在文中均有討論. 選擇適當的結構參 數, 及良好的製程技術, 我們可以很容易的製作出具有良好特性的雷射, 並將其移植到矽基板上. 移植前後的雷射二極體均未再封裝, 並可在連續 波(CW)的條件下操作. 移植後的雷射二極體特性與移植前比較, 其發射特 性略為退化, 然而其發射波長對溫度的敏感度, 可能因為移植後, 材料間 熱膨脹係數不同導致的熱應力影響, 反而得到改善. We had present our experiment to fabricate the ridge- waveguide (RWG) graded-index separated confinement heterostructure (GRIN-SCH) laser diodes and grafted them onto silicon substrate using epitaxial lift-off (ELO) technology. Considerations of the RWG and the GRIN-SCH laser structures were studied. Bychoosing suitable structure parameters and optimizing the fabrication process,we could fabricated the lasers and grafted them onto silicon substrate withdecent performances. Both conventional and ELO laser diodes were measured undercontinuous-wave (CW) operation without packaging. The emission characteristicsof ELO laser diodes did not degrade too much, and the temperature-dependent wavelength sensitivity was even improved, which might due to the thermal stressinduced by grafting.