電子迴旋共振電漿氧化成長閘極氧化層之應用及二氧化矽層的特性探討

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	李啟弘	en_US
dc.contributor.author	Li, Chii-Horng	en_US
dc.contributor.author	張國明	en_US
dc.contributor.author	Kow-Ming Chang	en_US
dc.date.accessioned	2014-12-12T02:17:27Z	-
dc.date.available	2014-12-12T02:17:27Z	-
dc.date.issued	1996	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#NT850428042	en_US
dc.identifier.uri	http://hdl.handle.net/11536/61909	-
dc.language.iso	zh_TW	en_US
dc.subject	電漿氧化	zh_TW
dc.subject	電漿預處理	zh_TW
dc.subject	舒緩現像	zh_TW
dc.subject	有紋路表面	zh_TW
dc.subject	穿隧氧化層	zh_TW
dc.subject	plasma oxidation	en_US
dc.subject	plasma pretreatment	en_US
dc.subject	relaxation phenomena	en_US
dc.subject	textured surface	en_US
dc.subject	tunnel oxide	en_US
dc.title	電子迴旋共振電漿氧化成長閘極氧化層之應用及二氧化矽層的特性探討	zh_TW
dc.title	The Study of Gate Oxides Grown by Electron Cyclotron Resonance Plasma Oxidation and the Characteristics of Silicon Dioxide Films	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子研究所	zh_TW
顯示於類別：	畢業論文